Stacking-dependent band gap and quantum transport in trilayer graphene
نویسندگان
چکیده
منابع مشابه
Stacking-dependent band gap and quantum transport in trilayer graphene
Graphene1–3 is an extraordinary two-dimensional (2D) system with chiral charge carriers and fascinating electronic, mechanical and thermal properties4,5. In multilayer graphene6,7, stacking order provides an important yet rarely explored degree of freedom for tuning its electronic properties8. For instance, Bernal-stacked trilayer graphene (B-TLG) is semi-metallic with a tunable band overlap, a...
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A striking feature of bilayer graphene is the induction of a significant band gap in the electronic states by the application of a perpendicular electric field1–7. Thicker graphene layers are also highly attractive materials. The ability to produce a band gap in these systems is of great fundamental and practical interest. Both experimental8 and theoretical9–16 investigations of graphene trilay...
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The stacking-dependent electronic structure and transport properties of bilayer graphene nanoribbons suspended between gold electrodes are investigated using density functional theory coupled with non-equilibrium Green’s functional method. We find substantially enhanced electron transmission as well as tunneling currents in the AA stacking of bilayer nanoribbons compared to either single-layer ...
متن کاملInteger quantum Hall effect in trilayer graphene.
By using high-magnetic fields (up to 60 T), we observe compelling evidence of the integer quantum Hall effect in trilayer graphene. The magnetotransport fingerprints are similar to those of the graphene monolayer, except for the absence of a plateau at a filling factor of ν=2. At a very low filling factor, the Hall resistance vanishes due to the presence of mixed electron and hole carriers indu...
متن کاملStacking boundaries and transport in bilayer graphene.
Pristine bilayer graphene behaves in some instances as an insulator with a transport gap of a few millielectronvolts. This behavior has been interpreted as the result of an intrinsic electronic instability induced by many-body correlations. Intriguingly, however, some samples of similar mobility exhibit good metallic properties with a minimal conductivity of the order of 2e(2)/h. Here, we propo...
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ژورنال
عنوان ژورنال: Nature Physics
سال: 2011
ISSN: 1745-2473,1745-2481
DOI: 10.1038/nphys2103